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| MMBD914 Discrete POWER & Signal Technologies MMBD914 CONNECTION DIAGRAM 3 3 3 5D 2 1 2 1 2 NC SOT-23 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See 1N4148 for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25C unless otherwise noted Parameter Value 75 200 600 700 1.0 2.0 -55 to +150 150 Units V mA mA mA A A C C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max MMBD914* 350 2.8 357 Units mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 (c)1997 Fairchild Semiconductor Corporation MMBD914 High Conductance Ultra Fast Diode (continued) Electrical Characteristics Symbol BV IR TA = 25C unless otherwise noted Parameter Breakdown Voltage Reverse Current Test Conditions I R = 100 A I R = 5.0 A VR = 20 V VR = 20 V, TA = 150C VR = 75 V I F = 10 mA VR = 0, f = 1.0 MHz I F = 10 mA, VR = 6.0 V, I RR = 1.0 mA, RL = 100 I F = 50 mA PEAK SQUARE WAVE PULSE WIDTH = 0.1 S 5 kHz - 100 kHz REP RATE Min 100 75 Max Units V V nA A A V pF nS v VF CO TRR VFM Forward Voltage Diode Capacitance Reverse Recovery Time Peak Forward Recovery Voltage 25 50 5.0 1.0 4.0 4.0 2.5 |
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